* Trench MOS Schottky technology
* Very low profile - typical height of 1.7 mm
* Ideal for automated placement
* Low forward voltage drop, low power losses
* High efficiency operation
* Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C
V30DL45BP Datasheet (109.18 KB)
V30DL45BP
109.18 KB
Trench mos barrier schottky rectifier.
www.vishay.com
V30DL45BP
Vishay General Semiconductor
TMBS® (Trench MOS Barrier Schottky) Rectifier for PV Solar Cell Bypass Protection
Ultra Low VF.
📁 Related Datasheet
V30DL45 Trench MOS Barrier Schottky Rectifier (Vishay)
V30DL50C Trench MOS Barrier Schottky Rectifier (Vishay)
V30DL50C-M3 Dual Trench MOS Barrier Schottky Rectifier (Vishay)
V30DL50CHM3 Dual Trench MOS Barrier Schottky Rectifier (Vishay)
V30D100C Trench MOS Barrier Schottky Rectifier (Vishay)
V30D170C Trench MOS Barrier Schottky Rectifier (Vishay)
V30D202C Dual High-Voltage Trench MOS Barrier Schottky Rectifier (Vishay)
V30D45C Dual Low-Voltage Trench MOS Barrier Schottky Rectifier (Vishay)
V30D60C Trench MOS Barrier Schottky Rectifier (Vishay)
V30D60CL Dual Trench MOS Barrier Schottky Rectifier (Vishay)
