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V30DL45BP Trench MOS Barrier Schottky Rectifier

V30DL45BP Description

www.vishay.com V30DL45BP Vishay General Semiconductor TMBS® (Trench MOS Barrier Schottky) Rectifier for PV Solar Cell Bypass Protection Ultra Low VF.

V30DL45BP Features

* Trench MOS Schottky technology
* Very low profile - typical height of 1.7 mm
* Ideal for automated placement
* Low forward voltage drop, low power losses
* High efficiency operation
* Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C

V30DL45BP Applications

* For use in solar cell junction box as a bypass diode for protection, using DC forward current without reverse bias. MECHANICAL DATA Case: SMPD (TO-263AC) Molding compound meets UL 94 V-0 flammability rating Base P/N-M3 - halogen-free, RoHS-compliant, and commercial grade Terminals: matte tin plated

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Datasheet Details

Part number
V30DL45BP
Manufacturer
Vishay ↗
File Size
109.18 KB
Datasheet
V30DL45BP-Vishay.pdf
Description
Trench MOS Barrier Schottky Rectifier

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Trench MOS Barrier Schottky Rectifier Vishay
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