V30DL50C Datasheet - Vishay

V30DL50C, Trench MOS Barrier Schottky Rectifier

www.vishay.com V30DL50C Vishay General Semiconductor Dual TMBS® (Trench MOS Barrier Schottky) Rectifier Ultra Low VF = 0.29 V at IF = 5 A eSMP® Ser

Features

* Trench MOS Schottky technology Available
* Very low profile - typical height of 1.7 mm
* Ideal for automated placement
* Low forward voltage drop, low power losses
* High efficiency operation
* Meets MSL level 1, per J-STD-020, LF maximum peak

Applications

* For use in high frequency DC/DC converters, switching power supplies, freewheeling diodes, OR-ing diode, and reverse battery protection.
PRIMARY CHARACTERISTICS IF(AV) 2 x 15 A VRRM 50 V IFSM 300 A VF at IF = 15 A TJ max.
0.42 V 150 °C Package SMPD (TO-263AC) Circuit configuration Commo

V30DL50C-Vishay.pdf