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V30DL50C Trench MOS Barrier Schottky Rectifier

V30DL50C Description

www.vishay.com V30DL50C Vishay General Semiconductor Dual TMBS® (Trench MOS Barrier Schottky) Rectifier Ultra Low VF = 0.29 V at IF = 5 A eSMP® Ser.

V30DL50C Features

* Trench MOS Schottky technology Available
* Very low profile - typical height of 1.7 mm
* Ideal for automated placement
* Low forward voltage drop, low power losses
* High efficiency operation
* Meets MSL level 1, per J-STD-020, LF maximum peak

V30DL50C Applications

* For use in high frequency DC/DC converters, switching power supplies, freewheeling diodes, OR-ing diode, and reverse battery protection. PRIMARY CHARACTERISTICS IF(AV) 2 x 15 A VRRM 50 V IFSM 300 A VF at IF = 15 A TJ max. 0.42 V 150 °C Package SMPD (TO-263AC) Circuit configuration Commo

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Datasheet Details

Part number
V30DL50C
Manufacturer
Vishay ↗
File Size
116.96 KB
Datasheet
V30DL50C-Vishay.pdf
Description
Trench MOS Barrier Schottky Rectifier

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Trench MOS Barrier Schottky Rectifier Vishay
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