Part number:
V30M100M-E3
Manufacturer:
File Size:
95.38 KB
Description:
Dual high voltage trench mos barrier schottky rectifier.
Datasheet Details
V30M100M-E3 Features
* Trench MOS Schottky technology
* Low forward voltage drop, low power losses
* High efficiency operation
* Solder dip 275 °C max. 10 s, per JESD 22-B106
* Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 V30M100M PI
Datasheet Details
V30M100M-E3
95.38 KB
Dual high voltage trench mos barrier schottky rectifier.
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V30M100M-E3 Distributor