V30M100M-E3 - Dual High Voltage Trench MOS Barrier Schottky Rectifier
V30M100M-E3 Features
* Trench MOS Schottky technology
* Low forward voltage drop, low power losses
* High efficiency operation
* Solder dip 275 °C max. 10 s, per JESD 22-B106
* Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 V30M100M PI
