V30M120CHM3 Features
* Trench MOS Schottky technology
* Low forward voltage drop, low power losses
* High efficiency operation
* Solder dip 275 °C max. 10 s, per JESD 22-B106
* AEC-Q101 qualified
* Material categorization: For definitions of compliance please see www.visha
Datasheet Details
V30M120CHM3, V30M120C-M3
146.49 KB
Dual high-voltage trench mos barrier schottky rectifier.
This datasheet PDF includes multiple part numbers: V30M120CHM3, V30M120C-M3.
Please refer to the document for exact specifications by model.
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V30M120CHM3 Distributor
