Part number:
V30M120M-E3
Manufacturer:
File Size:
95.56 KB
Description:
Dual high voltage trench mos barrier schottky rectifier.
Datasheet Details
V30M120M-E3 Features
* Trench MOS Schottky technology
* Low forward voltage drop, low power losses
* High efficiency operation
* Solder dip 275 °C max. 10 s, per JESD 22-B106
* Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 V30M120M PI
Datasheet Details
V30M120M-E3
95.56 KB
Dual high voltage trench mos barrier schottky rectifier.
📁 Related Datasheet
V30M120C Dual High-Voltage Trench MOS Barrier Schottky Rectifier (Vishay)
V30M120C-M3 Dual High-Voltage Trench MOS Barrier Schottky Rectifier (Vishay)
V30M120CHM3 Dual High-Voltage Trench MOS Barrier Schottky Rectifier (Vishay)
V30M100M-E3 Dual High Voltage Trench MOS Barrier Schottky Rectifier (Vishay)
V30MLA0603 Multilayer Transient Voltage Surge Suppressors (Littelfuse)
V30MLA0805L Multilayer Transient Voltage Surge Suppressors (Littelfuse)
V30MLA1210 Multilayer Transient Voltage Surge Suppressors (Littelfuse)
V30MLA1210L Multilayer Transient Voltage Surge Suppressors (Littelfuse)
V30M120M-E3 Distributor