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V30M120C-M3 Datasheet - Vishay

V30M120C-M3 Dual High-Voltage Trench MOS Barrier Schottky Rectifier

V30M120C-M3 Features

* Trench MOS Schottky technology

* Low forward voltage drop, low power losses

* High efficiency operation

* Solder dip 275 °C max. 10 s, per JESD 22-B106

* AEC-Q101 qualified

* Material categorization: For definitions of compliance please see www.visha

V30M120C-M3-Vishay.pdf

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Datasheet Details

Part number:

V30M120C-M3

Manufacturer:

Vishay ↗

File Size:

146.49 KB

Description:

Dual high-voltage trench mos barrier schottky rectifier.

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V30M120C-M3 V30M120C-M3 Dual High-Voltage Trench MOS Barrier Schottky Rectifier Vishay

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