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V30M120C-M3 Dual High-Voltage Trench MOS Barrier Schottky Rectifier

V30M120C-M3 Description

www.vishay.com V30M120CxM3, VI30M120CxM3 Vishay General Semiconductor Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.52 V .

V30M120C-M3 Features

* Trench MOS Schottky technology
* Low forward voltage drop, low power losses
* High efficiency operation
* Solder dip 275 °C max. 10 s, per JESD 22-B106
* AEC-Q101 qualified
* Material categorization: For definitions of compliance please see www. visha

V30M120C-M3 Applications

* For use in high frequency DC/DC converters, switching power supplies, freewheeling diodes, OR-ing diode, and reverse battery protection. PRIMARY CHARACTERISTICS IF(AV) VRRM IFSM VF at IF = 15 A TJ max. Package 2 x 15 A 120 V 150 A 0.68 V 175 °C TO-220AB, TO-262AA Diode variations Dual common ca

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Datasheet Details

Part number
V30M120C-M3
Manufacturer
Vishay ↗
File Size
146.49 KB
Datasheet
V30M120C-M3-Vishay.pdf
Description
Dual High-Voltage Trench MOS Barrier Schottky Rectifier

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Dual High-Voltage Trench MOS Barrier Schottky Rectifier Vishay
Vishay V30M120C-M3-like datasheet