* Trench MOS Schottky technology
* Low forward voltage drop, low power losses
* High efficiency operation
* Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package)
* Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106 (for
VB10150S Datasheet (150.56 KB)
VB10150S
150.56 KB
High voltage trench mos barrier schottky rectifier.
www.vishay.com V10150S, VF10150S, VB10150S, VI10150S Vishay General Semiconductor High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = .
📁 Related Datasheet
VB10170C Dual High-Voltage Trench MOS Barrier Schottky Rectifier (Vishay)
VB10170C-E3 Dual High Voltage Trench MOS Barrier Schottky Rectifier (Vishay)
VB10170C-M3 Dual High Voltage Trench MOS Barrier Schottky Rectifier (Vishay)
VB10170CHM3 Dual High Voltage Trench MOS Barrier Schottky Rectifier (Vishay)
VB1102M N-Channel MOSFET (VBsemi)
VB1106K N-Channel MOSFET (VBsemi)
VB1204M N-Channel MOSFET (VBsemi)
VB1205D-1W DC-DC CONVERTER (YUAN)
VB1205D-2W DC-DC CONVERTER (YUAN)
VB1205S-1W DC-DC CONVERTER (YUAN)
