* Trench MOS Schottky technology
* Low forward voltage drop, low power losses
* High efficiency operation
* AEC-Q101 qualified available - Automotive ordering code: base P/NHM3
* Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C
* Material c
VB10170CHM3 Datasheet (88.29 KB)
VB10170CHM3
88.29 KB
Dual high voltage trench mos barrier schottky rectifier.
VB10170C-E3, VB10170C-M3, VB10170CHM3 www.vishay.com Vishay General Semiconductor Dual High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low.
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