* TrenchFET® Power MOSFET
* 100 % Rg Tested
* 100 % UIS Tested
* Material categorization: APPLICATIONS
* DC/DC Converters
* Load Switch
* LED Backlighting in LCD TVs www.VBsemi.com ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
VB1102M
VBsemi
287.78 KB
N-channel mosfet.
VB1102M N-Channel 100 V (D-S) MOSFET MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () ID (A)a 0.240 at VGS = 10 V 2.0 100 0.250 at VGS = 6 V 1.8 .
📁 Related Datasheet
VB1106K N-Channel MOSFET (VBsemi)
VB10150S High Voltage Trench MOS Barrier Schottky Rectifier (Vishay)
VB10170C Dual High-Voltage Trench MOS Barrier Schottky Rectifier (Vishay)
VB10170C-E3 Dual High Voltage Trench MOS Barrier Schottky Rectifier (Vishay)
VB10170C-M3 Dual High Voltage Trench MOS Barrier Schottky Rectifier (Vishay)
VB10170CHM3 Dual High Voltage Trench MOS Barrier Schottky Rectifier (Vishay)
VB1204M N-Channel MOSFET (VBsemi)
VB1205D-1W DC-DC CONVERTER (YUAN)
VB1205D-2W DC-DC CONVERTER (YUAN)
VB1205S-1W DC-DC CONVERTER (YUAN)
