Datasheet4U Logo Datasheet4U.com

VB10170C-E3 Datasheet - Vishay

VB10170C-E3 Dual High Voltage Trench MOS Barrier Schottky Rectifier

VB10170C-E3 Features

* Trench MOS Schottky technology

* Low forward voltage drop, low power losses

* High efficiency operation

* Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C

* Material categorization: For definitions of compliance please see www.vishay.com/doc?99912

VB10170C-E3 Datasheet (86.50 KB)

Preview of VB10170C-E3 PDF
VB10170C-E3 Datasheet Preview Page 2 VB10170C-E3 Datasheet Preview Page 3

Datasheet Details

Part number:

VB10170C-E3

Manufacturer:

Vishay ↗

File Size:

86.50 KB

Description:

Dual high voltage trench mos barrier schottky rectifier.

📁 Related Datasheet

VB10170C-M3 Dual High Voltage Trench MOS Barrier Schottky Rectifier (Vishay)

VB10170C Dual High-Voltage Trench MOS Barrier Schottky Rectifier (Vishay)

VB10170CHM3 Dual High Voltage Trench MOS Barrier Schottky Rectifier (Vishay)

VB10150S High Voltage Trench MOS Barrier Schottky Rectifier (Vishay)

VB1102M N-Channel MOSFET (VBsemi)

VB1106K N-Channel MOSFET (VBsemi)

VB1204M N-Channel MOSFET (VBsemi)

VB1205D-1W DC-DC CONVERTER (YUAN)

TAGS

VB10170C-E3 Dual High Voltage Trench MOS Barrier Schottky Rectifier Vishay

VB10170C-E3 Distributor