* Trench MOS Schottky technology
* Low forward voltage drop, low power losses
* High efficiency operation
* Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C
* Material categorization: For definitions of compliance please see www.vishay.com/doc?99912
VB10170C-E3 Datasheet (86.50 KB)
VB10170C-E3
86.50 KB
Dual high voltage trench mos barrier schottky rectifier.
www.vishay.com VB10170C-E3 Vishay General Semiconductor Dual High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.57 V at IF = 2.5 A .
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