VB10170C Datasheet - Vishay

VB10170C Dual High-Voltage Trench MOS Barrier Schottky Rectifier

VB10170C Features

* Trench MOS Schottky technology

* Low forward voltage drop, low power losses

* High efficiency operation

* Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C

* Material categorization: For definitions of compliance please see www.vishay.com/doc?99912

Datasheet Details

VB10170C

85.96 KB

Dual high-voltage trench mos barrier schottky rectifier.

📁 Related Datasheet

VB10170C-E3 Dual High Voltage Trench MOS Barrier Schottky Rectifier (Vishay)

VB10170C-M3 Dual High Voltage Trench MOS Barrier Schottky Rectifier (Vishay)

VB10170CHM3 Dual High Voltage Trench MOS Barrier Schottky Rectifier (Vishay)

VB10150S High Voltage Trench MOS Barrier Schottky Rectifier (Vishay)

VB1102M N-Channel MOSFET (VBsemi)

VB1106K N-Channel MOSFET (VBsemi)

VB1204M N-Channel MOSFET (VBsemi)

VB1205D-1W DC-DC CONVERTER (YUAN)

TAGS

VB10170C Distributor