Part number:
VB1106K
Manufacturer:
VBsemi
File Size:
260.65 KB
Description:
N-channel mosfet.
* Halogen-free According to IEC 61249-2-21 Definition
* Low Threshold: 2 V (typ.)
* Low Input Capacitance: 25 pF
* Fast Switching Speed: 25 ns
* Low Input and Output Leakage
* TrenchFET® Power MOSFET
* Compliant to RoHS Directive 2002/95/EC SO
VB1106K
VBsemi
260.65 KB
N-channel mosfet.
📁 Related Datasheet
VB1102M N-Channel MOSFET (VBsemi)
VB10150S High Voltage Trench MOS Barrier Schottky Rectifier (Vishay)
VB10170C Dual High-Voltage Trench MOS Barrier Schottky Rectifier (Vishay)
VB10170C-E3 Dual High Voltage Trench MOS Barrier Schottky Rectifier (Vishay)
VB10170C-M3 Dual High Voltage Trench MOS Barrier Schottky Rectifier (Vishay)
VB10170CHM3 Dual High Voltage Trench MOS Barrier Schottky Rectifier (Vishay)
VB1204M N-Channel MOSFET (VBsemi)
VB1205D-1W DC-DC CONVERTER (YUAN)
VB1205D-2W DC-DC CONVERTER (YUAN)
VB1205S-1W DC-DC CONVERTER (YUAN)