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VS-CPV363M4KPbF IGBT

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Description

www.vishay.com VS-CPV363M4KPbF Vishay Semiconductors IGBT SIP Module (Short Circuit Rated Ultrafast IGBT) IMS-2 PRIMARY CHARACTERISTICS OUTPUT CU.
The IGBT technology is the key to Vishay’s Semiconductors advanced line of IMS (Insulated Metal Substrate) power modules.

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Features

* Short circuit rated ultrafast: optimized for high speed (see fig. 1 for current vs. frequency curve), and short circuit rated to 10 μs at 125 °C, VGE = 15 V
* Fully isolated printed circuit board mount package
* Switching-loss rating includes all “tail” losses
* HEX

Applications

* and where space is at a premium. ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL Collector to emitter voltage VCES Continuous collector current, each IGBT IC Pulsed collector current ICM Clamped inductive load current ILM Diode continuous forward current Diode maximum forward current Short cir

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VS-CPV363M4KPbF IGBT Vishay
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