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VS-CPV363M4FPbF IGBT

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Description

www.vishay.com VS-CPV363M4FPbF Vishay Semiconductors IGBT SIP Module (Fast IGBT) IMS-2 PRIMARY CHARACTERISTICS OUTPUT CURRENT IN A TYPICAL 5.0 kH.
The IGBT technology is the key to Vishay’s Semiconductors advanced line of IMS (insulated metal substrate) power modules.

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Features

* Fully isolated printed circuit board mount package
* Switching-loss rating includes all “tail” losses
* HEXFRED® soft ultrafast diodes
* Optimized for medium speed 1 kHz to 10 kHz, see fig. 1 for current vs. frequency curve
* Designed and qualified for indus

Applications

* and where space is at a premium.   ABSOLUTE MAXIMUM RATINGS PARAMETER Collector to emitter voltage SYMBOL VCES Continuous collector current, each IGBT IC Pulsed collector current Clamped inductive load current Diode continuous forward current Diode maximum forward current Gate to emitter volta

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