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VS-CPV363M4UPbF IGBT SIP

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Description

www.vishay.com VS-CPV363M4UPbF Vishay Semiconductors IGBT SIP Module (Ultrafast IGBT) .
The IGBT technology is the key to Vishay’s Semiconductors advanced line of IMS (Insulated Metal Substrate) power modules.

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Features

* IMS-2 PRIMARY CHARACTERISTICS OUTPUT CURRENT IN A TYPICAL 20 kHz MOTOR DRIVE VCES IRMS per phase (2.1 kW total) with TC = 90 °C TJ Supply voltage Power factor 600 V 7.1 ARMS 125 °C 360 VDC 0.8 Modulation depth (see fig. 1) 115 % VCE(on) (typical) at IC = 6.8 A, 25 °C Speed 1.7 V 8 kHz to 30

Applications

* and where space is at a premium. ABSOLUTE MAXIMUM RATINGS PARAMETER Collector to emitter voltage SYMBOL VCES Continuous collector current, each IGBT IC Pulsed collector current Clamped inductive load current Diode continuous forward current Diode maximum forward current Gate to emitter voltage

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VS-CPV363M4UPbF IGBT SIP Vishay
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