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SI4967DY - Dual P-Channel MOSFET

SI4967DY Description

Si4967DY Vishay Siliconix Dual P-Channel 1.8-V (G-S) MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 0.023 at VGS = - 4.5 V - 12 0.030 at VGS = - 2.5 V.

SI4967DY Features

* Halogen-free According to IEC 61249-2-21 Definition
* TrenchFET® Power MOSFETs: 1.8 V Rated
* Compliant to RoHS Directive 2002/95/EC S1 1 G1 2 S2 3 G2 4 SO-8 8 D1 7 D1 6 D2 5 D2 Top View Ordering Information: Si4967DY-T1-E3 (Lead (Pb)-free) Si4967DY-T1-GE3 (Lead (Pb)-f

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Dual P-Channel MOSFET Vishay Siliconix
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