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SiHFD110 Power MOSFET

SiHFD110 Description

IRFD110, SiHFD110 Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration VGS = 10 V 8.3 2.3.
G S D G S N-Channel MOSFET Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized.

SiHFD110 Features

* 100 0.54
* Dynamic dV/dt Rating
* Repetitive Avalanche Rated
* For Automatic Insertion
* End Stackable
* 175 °C Operating Temperature
* Fast Switching and Ease of Paralleling
* Lead (Pb)-free Available Available RoHS
* COMPLIANT www. DataS

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