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SiHFD123 Power MOSFET

SiHFD123 Description

IRFD123, SiHFD123 Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration VGS = 10 V 16 4.4 .
G S D G S N-Channel MOSFET Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized d.

SiHFD123 Features

* 100 0.27
* Dynamic dV/dt Rating
* Repetitive Avalanche Rated
* For Automatic Insertion
* End Stackable
* 175 °C Operating Temperature
* Fast Switching
* Ease of Paralleling
* Lead (Pb)-free Available Available RoHS
* COMPLIANT www

SiHFD123 Applications

* unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay pers

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Power MOSFET Vishay Siliconix
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