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WNM2072

MOSFET

WNM2072 Features

* Trench Technology

* Supper high density cell design

* Excellent ON resistance for higher DC current

* Extremely Low Threshold Voltage

* Small package DFN1006-3L Applications D GS Pin configuration (Top view) F F = Device Code

* = Month (A~Z) Marking

* Small Signal Swi

WNM2072 General Description

Typical Rds(on) (Ω) 0.220@ VGS=4.5V 0.260@ VGS=2.5V 0.315@ VGS=1.8V Http://www.sh-willsemi.com G S D DFN1006-3L The WNM2072 is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge. This device is suitable.

WNM2072 Datasheet (1.88 MB)

Preview of WNM2072 PDF

Datasheet Details

Part number:

WNM2072

Manufacturer:

WillSEMI

File Size:

1.88 MB

Description:

Mosfet.

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WNM2072 MOSFET WillSEMI

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