WNM2046B - MOSFET
DFN1006-3L The WNM2046B is N-Channel enhancement MOS Field Effect Transistor.
Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge.
This device is suitable for use in DC-DC conversion, power switch and charging circuit.
Standard Product WNM2046B is Pb-free
WNM2046B Features
* Trench Technology
* Supper high density cell design
* Excellent ON resistance for higher DC current
* Extremely Low Threshold Voltage
* Small package DFN1006-3L Applications D GS Pin configuration (Top view) 6 = Device Code
* = Month (A~Z) Marking
* Small Signal Switc
