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WNM2046B

MOSFET

WNM2046B Features

* Trench Technology

* Supper high density cell design

* Excellent ON resistance for higher DC current

* Extremely Low Threshold Voltage

* Small package DFN1006-3L Applications D GS Pin configuration (Top view) 6 = Device Code

* = Month (A~Z) Marking

* Small Signal Switc

WNM2046B General Description

DFN1006-3L The WNM2046B is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge. This device is suitable for use in DC-DC conversion, power switch and charging circuit. Standard Product WNM2046B is Pb-free.

WNM2046B Datasheet (1.37 MB)

Preview of WNM2046B PDF

Datasheet Details

Part number:

WNM2046B

Manufacturer:

WillSEMI

File Size:

1.37 MB

Description:

Mosfet.
WNM2046B Single N-Channel, 20V, 0.71A, Power MOSFET VDS (V) 20 Typical Rds(on) (Ω) 0.220@ VGS=4.5V 0.260@ VGS=2.5V 0.315@ VGS=1.8V WNM2046B Http:/.

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WNM2046B MOSFET WillSEMI

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