Part number:
WNM2046
Manufacturer:
Will Semiconductor
File Size:
1.02 MB
Description:
N-channel mosfet.
DFN1006-3L The WNM2046 is N-Channel enhancement MOS Field Effect Transistor.
Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge.
This device is suitable for use in DC-DC conversion, power switch and charging circuit.
Standard Product WNM2046 is Pb-free.
WNM2046 Features
* Trench Technology
* Supper high density cell design
* Excellent ON resistance for higher DC current
* Extremely Low Threshold Voltage
* Small package DFN1006-3L Applications D GS Pin configuration (Top view) 6 = Device Code
* = Month (A~Z) Marking
* Small Signal Switc
Datasheet Details
WNM2046
Will Semiconductor
1.02 MB
N-channel mosfet.
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