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WPMD2010 MOSFET

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Description

WPMD2010 Dual P-Channel, -20 V, -3.6A, Power MOSFET .
The WPMD2010 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

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Datasheet Specifications

Part number
WPMD2010
Manufacturer
WillSEMI
File Size
772.10 KB
Datasheet
WPMD2010-WillSEMI.pdf
Description
MOSFET

Features

* V(BR)DSS
* 20 V RDS(on) Typ 75mΩ@
* 4.5V 101mΩ@
* 2.5V z Lower RDS(on) Solution in 2x2 mm Package z 1.8 V RDS(on) Rating for Operation at Low Voltage Gate Drive Logic Level z Low Profile (< 0.8 mm) for Easy Fit in Thin Environments z Bidirectional Current Flow with Common Sou

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