WPMD2010 - MOSFET

WillSEMI

Datasheet Details

The WPMD2010 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

V(BR)DSS.
20 V RDS(on) Typ 75mΩ@.
4.5V 101mΩ@.
2.5V z Lower RDS(on) Solution in 2x2 mm Package z 1.8 V RDS(on) Rating for Operation at Low Voltage Gate Drive Logic Level z Low Profile (< 0.8 mm) for Easy Fit in Thin Environments z Bidirectional Current Flow with Common Source Configuration z DFN6 Package Provides Exposed Drain Pad for Excellent Thermal Conduction.

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Published: Apr 30, 2017 |