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WPMD2013 MOSFET

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Description

WPMD2013 Dual P-Channel, -20V, -0.64A, Small Signal MOSFET VDS (V) -20 Rds(on) (ȍ) 0.550@ VGS=-4.5V 0.740@ VGS=-2.5V 0.860@ VGS=-1.8V .
The WPMD2013 is P-Channel enhancement MOS Field Effect Transistor.

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Datasheet Specifications

Part number
WPMD2013
Manufacturer
WillSEMI
File Size
365.39 KB
Datasheet
WPMD2013-WillSEMI.pdf
Description
MOSFET

Features

* z Trench Technology z Supper high density cell design z Excellent ON resistance z Extremely Low Threshold Voltage z Small package SOT-563 WPMD2013 Http//:www. willsemi. com SOT-563 D1 G2 S2 6 54 1 23 S1 G1 D2 Pin configuration (Top view) 6 54 13
* 1 23 13 = Device Code
* = Month (A~Z) Marking

Applications

* z DC-DC converter circuit z Small Signal Switch z Load Switch z Level Shift Order information Device Package Shipping WPMD2013-6/TR SOT-563 3000/Reel&Tape Will Semiconductor Ltd. 1 Dec,2011 - Rev.1.3 Absolute Maximum ratings Parameter Drain-S

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