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WPMD2011 MOSFET

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Description

WPMD2011 Dual P-Channel -20V, -4.4A, 52mȍ Power MOSFET V(BR)DSS -20 Rds(on) (Ÿ) 0.052 @ -4.5V 0.064 @ -2.5V 0.080 @ -1.8V 0.090 @ -1.5V .
The WPMD2011 is P-Channel enhancement dual MOS Field Effect Transistor.

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Datasheet Specifications

Part number
WPMD2011
Manufacturer
WillSEMI
File Size
188.39 KB
Datasheet
WPMD2011-WillSEMI.pdf
Description
MOSFET

Features

* WPMD2011 Http://www. willsemi. com DFN2x2-6L S1 1 G1 2 D1 6 D1 5 G2 D2 3 D2 4 S2 Pin Configuration (Top View) z Trench Technology z Supper high density cell design z Excellent ON resistance for highest DC current z Extremely low threshold voltage z Bidirectional current flow with common source

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