WPMD2008 - MOSFET

WillSEMI

Datasheet Details

The WPMD2008 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

9%5'66 í20 V 5'6RQ 0$; 110m¡@ í4.5V 138m¡@ í2.5V WPMD2008 Http://www. willsemi. com z Lowest RDS(on) Solution in 2x2 mm Package z 1.8 V RDS(on) Rating for Operation at Low Voltage Gate Drive Logic Level z Low Profile (< 0.8 mm) for Easy Fit in Thin Environments z Bidirectional Current Flow with Common Source Configuration z DFN6 Package Provides Exposed Drain Pad for Excellent Thermal Conduction.

📁 WPMD2008 Similar Datasheet

Other Datasheets by WillSEMI

Published: Apr 30, 2017 |