WPMD2012 - MOSFET
WPMD2012 Features
* z Trench Technology z Supper high density cell design z Excellent ON resistance z Extremely Low Threshold Voltage z Small package SOT-363 WPMD2012 Http//:www.willsemi.com SOT-363 D1 G2 S2 6 54 1 23 S1 G1 D2 Pin configuration (Top view) 6 54 12
* 1 23 12 = Device Code
* = Month (A~Z) Marking
