WPMD2012 MOSFET

WillSEMI

Description

WPMD2012 Dual P-Channel, -20V, -0.64A, Small Signal MOSFET VDS (V) -20 Rds(on) (ȍ) 0.550@ VGS=-4.5V 0.740@ VGS=-2.5V 0.910@ VGS=-1.8V .
The WPMD2012 is P-Channel enhancement MOS Field Effect Transistor.

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WPMD2012 Datasheet Preview — Preview of WPMD2012 PDF

Datasheet Specifications

Part number: WPMD2012
Manufacturer: WillSEMI
File Size: 421.15 KB
Datasheet: WPMD2012-WillSEMI.pdf
Description: MOSFET

Features

* z Trench Technology z Supper high density cell design z Excellent ON resistance z Extremely Low Threshold Voltage z Small package SOT-363 WPMD2012 Http//:www. willsemi. com SOT-363 D1 G2 S2 6 54 1 23 S1 G1 D2 Pin configuration (Top view) 6 54 12
* 1 23 12 = Device Code
* = Month (A~Z) Marking

Applications

* z DC-DC converter circuit z Small Signal Switch z Load Switch z Level Shift Order information Device Package Shipping WPMD2012-6/TR SOT-363 3000/Reel&Tape Will Semiconductor Ltd. 1 Dec,2011 - Rev.1.4 Absolute Maximum ratings Parameter Drain-S

WPMD2012 Distributors

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WPMD2012 MOSFET WillSEMI

WillSEMI WPMD2012-like datasheet