WPMD2012 Datasheet, Mosfet, WillSEMI

WPMD2012 Features

• Mosfet z Trench Technology z Supper high density cell design z Excellent ON resistance z Extremely Low Threshold Voltage z Small package SOT-363 WPMD2012 Http//:www.willsemi.com SOT-363 D1 G2

PDF File Details

Part number:

WPMD2012

Manufacturer:

WillSEMI

File Size:

421.15kb

Download:

📄 Datasheet

Description:

Mosfet. The WPMD2012 is P-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent R

WPMD2012 Application

• Applications z DC-DC converter circuit z Small Signal Switch z Load Switch z Level Shift Order information Device Package Shipping WPMD2012-6/T

TAGS

WPMD2012

WillSEMI

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