PFF4N60E - N-Channel MOSFET
PFF4N60E Features
* Originative New Design 100% EAS Test Rugged Gate Oxide Technology Extremely Low Intrinsic Capacitances Remarkable Switching Characteristics Unequalled Gate Charge : 10 nC (Typ.) Extended Safe Operating Area Lower RDS(ON) : 2.0 Ω (Typ.) @VGS=10V Pb Free APPLICATION Low power batte
