PFF4N60E
Wing On
1.11MB
N-channel mosfet.
📁 Related Datasheet
PFF4N60 - N-Channel MOSFET
(Pyramis)
Pyramis Corporation
“The Silicon System Solutions Company” Applications: • Adaptor • Charger • SMPS Standby Power • LCD Panel Power Features: • Low ON.
PFF4N60 - N-channel MOSFET
(PowerGate)
PFP4N60/PFF4N60
N-channel MOSFET
Features
■ High ruggedness ■ RDS(ON) (Max 2.3 Ω)@VGS=10V ■ Gate Charge (Typ. 27nC) ■ Improved dv/dt Capability ■ 100%.
PFF4N65F - N-Channel MOSFET
(Wing On)
PFP4N65F / PFF4N65F
FEATURES
Originative New Design 100% EAS Test Rugged Gate Oxide Technology Extremely Low Intrinsic Capacitances Remarka.
PFF4N70E - N-Channel MOSFET
(Wing On)
PFP4N70E / PFF4N70E
FEATURES
Originative New Design 100% EAS Test Rugged Gate Oxide Technology Extremely Low Intrinsic Capacitances Remarka.
PFF4N80 - N-Channel MOSFET
(Wing On)
May 2009
PFP4N80 / PFF4N80
FEATURES
Originative New Design 100% EAS Test Rugged Gate Oxide Technology Extremely Low Intrinsic Capacitances .
PFF10N40 - N-Channel MOSFET
(Wing On)
Sep 2008
PFP10N40 / PFF10N40
FEATURES
Originative New Design 100% EAS Test Rugged Gate Oxide Technology Extremely Low Intrinsic Capacitances.
PFF10N60 - N-Channel MOSFET
(Wing On)
Nov 2011
PFP10N60 / PFF10N60
FEATURES
Originative New Design 100% EAS Test Rugged Gate Oxide Technology Extremely Low Intrinsic Capacitances.
PFF10N65 - N-Channel MOSFET
(Wing On)
PFP10N65 / PFF10N65
FEATURES
Originative New Design 100% EAS Test Rugged Gate Oxide Technology Extremely Low Intrinsic Capacitances Remarka.
PFF10N80A - N-Channel MOSFET
(Wing On)
PFP10N80A / PFF10N80A
FEATURES
Originative New Design 100% EAS Test Rugged Gate Oxide Technology Extremely Low Intrinsic Capacitances Remar.
PFF10N80E - N-Channel MOSFET
(Wing On)
PFP10N80E / PFF10N80E
FEATURES
Originative New Design 100% EAS Test Rugged Gate Oxide Technology Extremely Low Intrinsic Capacitances Remar.
