PFF4N60E Datasheet - Wing On

PFF4N60E N-Channel MOSFET

PFF4N60E Features

*  Originative New Design  100% EAS Test  Rugged Gate Oxide Technology  Extremely Low Intrinsic Capacitances  Remarkable Switching Characteristics  Unequalled Gate Charge : 10 nC (Typ.)  Extended Safe Operating Area  Lower RDS(ON) : 2.0 Ω (Typ.) @VGS=10V  Pb Free APPLICATION  Low power batte

PFF4N60E Datasheet (1.11 MB)