PFF4N70E Datasheet - Wing On

PFF4N70E N-Channel MOSFET

PFF4N70E Features

*  Originative New Design  100% EAS Test  Rugged Gate Oxide Technology  Extremely Low Intrinsic Capacitances  Remarkable Switching Characteristics  Unequalled Gate Charge : 10 nC (Typ.)  Extended Safe Operating Area  Lower RDS(ON) : 2.45 Ω (Typ.) @VGS=10V  Halogen Free APPLICATION  Low power

PFF4N70E Datasheet (0.96 MB)