PFF4N65F Datasheet, Mosfet, Wing On

PFF4N65F Features

  • Mosfet  Originative New Design  100% EAS Test  Rugged Gate Oxide Technology  Extremely Low Intrinsic Capacitances  Remarkable Switching Characteristics  Unequalled Gate Charge : 12.4 nC

PDF File Details

Part number:

PFF4N65F

Manufacturer:

Wing On

File Size:

833.32kb

Download:

📄 Datasheet

Description:

N-channel mosfet.

Datasheet Preview: PFF4N65F 📥 Download PDF (833.32kb)
Page 2 of PFF4N65F Page 3 of PFF4N65F

TAGS

PFF4N65F
N-Channel
MOSFET
Wing On

📁 Related Datasheet

PFF4N60 - N-Channel MOSFET (Pyramis)
Pyramis Corporation “The Silicon System Solutions Company” Applications: • Adaptor • Charger • SMPS Standby Power • LCD Panel Power Features: • Low ON.

PFF4N60 - N-channel MOSFET (PowerGate)
PFP4N60/PFF4N60 N-channel MOSFET Features ■ High ruggedness ■ RDS(ON) (Max 2.3 Ω)@VGS=10V ■ Gate Charge (Typ. 27nC) ■ Improved dv/dt Capability ■ 100%.

PFF4N60E - N-Channel MOSFET (Wing On)
PFP4N60E / PFF4N60E FEATURES  Originative New Design  100% EAS Test  Rugged Gate Oxide Technology  Extremely Low Intrinsic Capacitances  Remarka.

PFF4N70E - N-Channel MOSFET (Wing On)
PFP4N70E / PFF4N70E FEATURES  Originative New Design  100% EAS Test  Rugged Gate Oxide Technology  Extremely Low Intrinsic Capacitances  Remarka.

PFF4N80 - N-Channel MOSFET (Wing On)
May 2009 PFP4N80 / PFF4N80 FEATURES  Originative New Design  100% EAS Test  Rugged Gate Oxide Technology  Extremely Low Intrinsic Capacitances .

PFF10N40 - N-Channel MOSFET (Wing On)
Sep 2008 PFP10N40 / PFF10N40 FEATURES  Originative New Design  100% EAS Test  Rugged Gate Oxide Technology  Extremely Low Intrinsic Capacitances.

PFF10N60 - N-Channel MOSFET (Wing On)
Nov 2011 PFP10N60 / PFF10N60 FEATURES  Originative New Design  100% EAS Test  Rugged Gate Oxide Technology  Extremely Low Intrinsic Capacitances.

PFF10N65 - N-Channel MOSFET (Wing On)
PFP10N65 / PFF10N65 FEATURES  Originative New Design  100% EAS Test  Rugged Gate Oxide Technology  Extremely Low Intrinsic Capacitances  Remarka.

PFF10N80A - N-Channel MOSFET (Wing On)
PFP10N80A / PFF10N80A FEATURES  Originative New Design  100% EAS Test  Rugged Gate Oxide Technology  Extremely Low Intrinsic Capacitances  Remar.

PFF10N80E - N-Channel MOSFET (Wing On)
PFP10N80E / PFF10N80E FEATURES  Originative New Design  100% EAS Test  Rugged Gate Oxide Technology  Extremely Low Intrinsic Capacitances  Remar.

Since 2006. D4U Semicon.   |   Datasheet4U.com   |   Contact Us   |   Privacy Policy   |   Purchase of parts