PFF4N65F - N-Channel MOSFET
PFF4N65F Features
* Originative New Design 100% EAS Test Rugged Gate Oxide Technology Extremely Low Intrinsic Capacitances Remarkable Switching Characteristics Unequalled Gate Charge : 12.4 nC (Typ.) Extended Safe Operating Area Lower RDS(ON) : 2.2 Ω (Typ.) @VGS=10V APPLICATION Low power battery charg
