PFF4N65F Datasheet - Wing On

PFF4N65F N-Channel MOSFET

PFF4N65F Features

*  Originative New Design  100% EAS Test  Rugged Gate Oxide Technology  Extremely Low Intrinsic Capacitances  Remarkable Switching Characteristics  Unequalled Gate Charge : 12.4 nC (Typ.)  Extended Safe Operating Area  Lower RDS(ON) : 2.2 Ω (Typ.) @VGS=10V APPLICATION  Low power battery charg

PFF4N65F Datasheet (833.32 KB)