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WFU7N70S Power MOSFET

WFU7N70S Description

WFU7N70S 700V Super-Junction Power MOSFET .
Power MOSFET is fabricated using advanced super junction technology.

WFU7N70S Features

* Ultra low Rdson
* Ultra low gate charge (typ. Qg =19nC)
* 100% UIS tested

WFU7N70S Applications

* which require superior power density and outstanding efficiency. D G S Absolute Maximum Ratings Symbol Parameter VDSS ID Drain Source Voltage Continuous Drain Current (Tc=25℃) (Tc=100℃) IDM Drain Current Pulsed 1) VGS Gate to Source Voltage EAS Single Pulse Avalanche Energy 2) IAR Single Puls

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Datasheet Details

Part number
WFU7N70S
Manufacturer
Winsemi
File Size
251.95 KB
Datasheet
WFU7N70S-Winsemi.pdf
Description
Power MOSFET

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Power MOSFET Winsemi
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