WFU7N70S Datasheet - Winsemi

WFU7N70S, Power MOSFET

WFU7N70S 700V Super-Junction Power MOSFET

Features

* Ultra low Rdson
* Ultra low gate charge (typ.
Qg =19nC)
* 100% UIS tested

Applications

* which require superior power density and outstanding efficiency.
D G S Absolute Maximum Ratings Symbol Parameter VDSS ID Drain Source Voltage Continuous Drain Current (Tc=25℃) (Tc=100℃) IDM Drain Current Pulsed 1) VGS Gate to Source Voltage EAS Single Pulse Avalanche Energy 2) IAR Single Puls

WFU7N70S-Winsemi.pdf