WFU7N65S Power MOSFET

Winsemi

Description

WFU7N65S 650V Super-Junction Power MOSFET .
Power MOSFET is fabricated using advanced super junction technology.

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Datasheet Specifications

Part number: WFU7N65S
Manufacturer: Winsemi
File Size: 252.47 KB
Datasheet: WFU7N65S-Winsemi.pdf
Description: Power MOSFET

Features

* Ultra low Rdson
* Ultra low gate charge (typ. Qg =19nC)
* 100% UIS tested

Applications

* which require superior power density and outstanding efficiency. D G S Absolute Maximum Ratings Symbol Parameter VDSS ID Drain Source Voltage Continuous Drain Current (Tc=25℃) (Tc=100℃) IDM Drain Current Pulsed 1) VGS Gate to Source Voltage EAS Single Pulse Avalanche Energy 2) IAR Single Puls

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WFU7N65S Power MOSFET Winsemi

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