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C3M0075120J Silicon Carbide Power MOSFET

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Description

C3M0075120J Silicon Carbide Power MOSFET C3MTM MOSFET Technology N-Channel Enhancement Mode .

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Datasheet Specifications

Part number
C3M0075120J
Manufacturer
Wolfspeed
File Size
950.93 KB
Datasheet
C3M0075120J-Wolfspeed.pdf
Description
Silicon Carbide Power MOSFET

Features

* 3rd generation SiC MOSFET technology
* Low impedance package with driver source pin
* 7 mm of creepage distance between drain and source
* High blocking voltage with low on-resistance
* High-speed switching with low capacitances
* Fast intrinsic diod

Applications

* Renewable energy
* EV battery chargers
* High voltage DC/DC converters
* Switch mode power supplies TO-263-7 Drain (TAB) Gate (Pin 1) Driver Source (Pin 2) Power Source (Pin 3,4,5,6,7) Package Types: TO-263-7 PN’s: C3M0075120J Wolfspeed, Inc. is in the process

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