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D2012 Si NPN Transistor

D2012 Description

www.DataSheet4U.com YOUDA TRANSISTOR Si NPN TRANSISTOR¡ª .
AND FEATURES. Collector-Emitter voltage: BVCBO= 60V. Collector current up to 3A. High hFE linearity D2012 D2012 PIN CONFIGURATIONS PIN.

D2012 Features

* Collector-Emitter voltage: BVCBO= 60V
* Collector current up to 3A
* High hFE linearity D2012 D2012 PIN CONFIGURATIONS PIN 1 2 3 SYMBOL Emitter Collector Base ABSOLUTE MAXIMUM RATINGS (Tamb=25¡æ ) PARAMETER SYMBOL Collector-Base Voltage BVCBO Collector-Emitter Voltage BVCEO Emitter-Ba

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Datasheet Details

Part number
D2012
Manufacturer
Wuxi Youda Electronics
File Size
171.90 KB
Datasheet
D2012_WuxiYoudaElectronics.pdf
Description
Si NPN Transistor

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NPN Transistor Wuxi Youda Electronics
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