D2012 Si NPN Transistor

Wuxi Youda Electronics

Description

www.DataSheet4U.com YOUDA TRANSISTOR Si NPN TRANSISTOR¡ª .
AND FEATURES. Collector-Emitter voltage: BVCBO= 60V. Collector current up to 3A. High hFE linearity D2012 D2012 PIN CONFIGURATIONS PIN.

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Datasheet Specifications

Part number: D2012
Manufacturer: Wuxi Youda Electronics
File Size: 171.90 KB
Datasheet: D2012_WuxiYoudaElectronics.pdf
Description: Si NPN Transistor

Features

* Collector-Emitter voltage: BVCBO= 60V
* Collector current up to 3A
* High hFE linearity D2012 D2012 PIN CONFIGURATIONS PIN 1 2 3 SYMBOL Emitter Collector Base ABSOLUTE MAXIMUM RATINGS (Tamb=25¡æ ) PARAMETER SYMBOL Collector-Base Voltage BVCBO Collector-Emitter Voltage BVCEO Emitter-Ba

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