XP09T10GK N-CHANNEL ENHANCEMENT MODE POWER MOSFET

YAGEO

Description

XP09T10GK Halogen-Free Product N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Simple Drive Requirement D ▼ Lower Gate Charge ▼ Fast Switching Character.
XP09T10 series are innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance.

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Datasheet Specifications

Part number: XP09T10GK
Manufacturer: YAGEO
File Size: 182.57 KB
Datasheet: XP09T10GK-YAGEO.pdf
Description: N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Applications

* The SOT-223 package is designed for suface mount application, larger heatsink than SO-8 and SOT package. BVDSS RDS(ON) ID 100V 300mΩ 2.1A D SOT-223 S D G Absolute Maximum Ratings@Tj=25oC(unless otherwise specified) Symbol Parameter Rating Units VDS VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ T

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XP09T10GK N-CHANNEL ENHANCEMENT MODE POWER MOSFET YAGEO

YAGEO XP09T10GK-like datasheet