XP3C011M N-& P-CHANNEL ENHANCEMENT MODE POWER MOSFET

YAGEO

Description

XP3C011M Halogen-Free Product N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Simple Drive Requirement ▼ Low Gate Charge ▼ Fast Switching Performance.
XP3C011 series are innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance.

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Datasheet Specifications

Part number: XP3C011M
Manufacturer: YAGEO
File Size: 275.37 KB
Datasheet: XP3C011M-YAGEO.pdf
Description: N-& P-CHANNEL ENHANCEMENT MODE POWER MOSFET

Applications

* The SO-8 package is widely preferred for all commercialindustrial surface mount applications using infrared reflow technique and suited for voltage conversion or switch applications. N-CH P-CH G1 BVDSS RDS(ON) ID3 BVDSS RDS(ON) ID3 D1 G2 S1 30V 10mΩ 10.8A -30V 22mΩ -7.8A D2 S2 Absolute Maximum

XP3C011M Distributors

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XP3C011M N- & P-CHANNEL ENHANCEMENT MODE POWER MOSFET YAGEO

YAGEO XP3C011M-like datasheet