XP3C017AYT N- & P-CHANNEL ENHANCEMENT MODE POWER MOSFET

YAGEO

Description

XP3C017AYT Halogen-Free Product N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Simple Drive Requirement ▼ Good Thermal Performance D1 D2 N-CH ▼.
PMPAK® 3x3 P-CH XP3C017A series are innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching.

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Datasheet Specifications

Part number: XP3C017AYT
Manufacturer: YAGEO
File Size: 730.40 KB
Datasheet: XP3C017AYT-YAGEO.pdf
Description: N- & P-CHANNEL ENHANCEMENT MODE POWER MOSFET

Applications

* The PMPAK ® 3x3 package is special for voltage conversion application using standard infrared reflow technique with the backside heat sink to achieve the good thermal performance. BVDSS RDS(ON) BVDSS RDS(ON) D1 G2 S1 30V 17.8mΩ -30V 30mΩ D2 S2 Absolute Maximum Ratings@Tj=25oC. (unless otherwise

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XP3C017AYT P-CHANNEL ENHANCEMENT MODE POWER MOSFET YAGEO

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