XP3C023AMT N- & P-CHANNEL ENHANCEMENT MODE POWER MOSFET

YAGEO

Description

XP3C023AMT Halogen-Free Product N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET D1 D1 D2 D2 ▼ Simple Drive Requirement ▼ Good Thermal Performance ▼ .
S1 G1 S2 G2 XP3C023A series are innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching perf.

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Datasheet Specifications

Part number: XP3C023AMT
Manufacturer: YAGEO
File Size: 730.84 KB
Datasheet: XP3C023AMT-YAGEO.pdf
Description: N- & P-CHANNEL ENHANCEMENT MODE POWER MOSFET

Applications

* BVDSS RDS(ON) ID3 BVDSS RDS(ON) ID3 30V 10.4mΩ 12A -30V 23.5mΩ -10A D1 D1 D2 D2 The PMPAK ® 5x6 package is special for voltage conversion application using standard infrared reflow technique with the backside heat sink to achieve the good thermal performance. S1 G1 S2 G2 PMPAK® 5x6 Absolute

XP3C023AMT Distributors

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XP3C023AMT P-CHANNEL ENHANCEMENT MODE POWER MOSFET YAGEO

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