XP3C017AY N- & P-CHANNEL ENHANCEMENT MODE POWER MOSFET

YAGEO

Description

XP3C017AY Halogen-Free Product N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Simple Drive Requirement ▼ Low Gate Charge ▼ Fast Switching Performanc.
XP3C017A series are innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance.

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Datasheet Specifications

Part number: XP3C017AY
Manufacturer: YAGEO
File Size: 267.83 KB
Datasheet: XP3C017AY-YAGEO.pdf
Description: N- & P-CHANNEL ENHANCEMENT MODE POWER MOSFET

Applications

* N-CH P-CH BVDSS RDS(ON) ID BVDSS RDS(ON) ID D1 30V 17.8mΩ 7A -30V 30mΩ -5.5A D2 The 2928-8 J-lead package provides good on-resistance G1 G2 performance and space saving like TSOP-6. S1 S2 Absolute Maximum Ratings@Tj=25oC(unless otherwise specified) Symbol Parameter Rating Units N-ch

XP3C017AY Distributors

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XP3C017AY P-CHANNEL ENHANCEMENT MODE POWER MOSFET YAGEO

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