XP6NA6R5IT N-CHANNEL ENHANCEMENT MODE POWER MOSFET

YAGEO

Description

XP6NA6R5IT Halogen-Free Product N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ 100% Rg & UIS Test D ▼ Simple Drive Requirement ▼ Fast Switching Charact.
XP6NA6R5 series are innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance.

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Datasheet Specifications

Part number: XP6NA6R5IT
Manufacturer: YAGEO
File Size: 275.67 KB
Datasheet: XP6NA6R5IT-YAGEO.pdf
Description: N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Applications

* BVDSS RDS(ON) ID 60V 6.5mΩ 49A G DS TO-220CFM-T(IT) The TO-220CFM package is widely preferred for all commercial-industrial through hole applications. The mold compound provides a high isolation voltage capability and low thermal resistance between the tab and the external heat-sink. Absolute

XP6NA6R5IT Distributors

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XP6NA6R5IT N-CHANNEL ENHANCEMENT MODE POWER MOSFET YAGEO

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