XP6NA6R5P N-CHANNEL ENHANCEMENT MODE POWER MOSFET

YAGEO

Description

XP6NA6R5P Halogen-Free Product N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ 100% Rg & UIS Test D ▼ Simple Drive Requirement ▼ Fast Switching Characte.
XP6NA6R5 series are innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance.

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Datasheet Specifications

Part number: XP6NA6R5P
Manufacturer: YAGEO
File Size: 155.08 KB
Datasheet: XP6NA6R5P-YAGEO.pdf
Description: N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Applications

* The TO-220 package is widely preferred for all commercial-industrial through hole applications. The low thermal resistance and low package cost contribute to the worldwide popular package. BVDSS RDS(ON) ID G D S 60V 6.5mΩ 66A TO-220(P) Absolute Maximum Ratings@Tj=25oC(unless otherwise specified

XP6NA6R5P Distributors

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XP6NA6R5P N-CHANNEL ENHANCEMENT MODE POWER MOSFET YAGEO

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