XP6NA6R5M N-CHANNEL ENHANCEMENT MODE POWER MOSFET

YAGEO

Description

XP6NA6R5M Halogen-Free Product N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ 100% Rg & UIS Test ▼ Simple Drive Requirement ▼ Low On-resistance ▼ RoHS Com.
XP6NA6R5 series are innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance.

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Datasheet Specifications

Part number: XP6NA6R5M
Manufacturer: YAGEO
File Size: 207.99 KB
Datasheet: XP6NA6R5M-YAGEO.pdf
Description: N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Applications

* The SO-8 package is widely preferred for all commercial-industrial surface mount applications using infrared reflow technique and suited for voltage conversion or switch applications. BVDSS RDS(ON) ID3 G 60V 6.5mΩ 15A D S Absolute Maximum Ratings@Tj=25oC(unless otherwise specified) Symbol Par

XP6NA6R5M Distributors

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XP6NA6R5M N-CHANNEL ENHANCEMENT MODE POWER MOSFET YAGEO

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