XP9926GM DUAL N-CHANNEL ENHANCEMENT MODE POWER MOSFET

YAGEO

Description

XP9926GM Halogen-Free Product DUAL N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Low Gate Charge ▼ Capable of 2.5V Gate Drive ▼ Surface Mount Package ▼ R.
XP9926 series are innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance.

📥 Download Datasheet

XP9926GM Datasheet Preview — Preview of XP9926GM PDF

Datasheet Specifications

Part number: XP9926GM
Manufacturer: YAGEO
File Size: 205.43 KB
Datasheet: XP9926GM-YAGEO.pdf
Description: DUAL N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Applications

* The SO-8 package is widely preferred for all commercialindustrial surface mount applications using infrared reflow technique and suited for voltage conversion or switch applications. BVDSS RDS(ON) ID D1 G2 S1 20V 30mΩ 6A D2 S2 Absolute Maximum Ratings@Tj=25oC(unless otherwise specified) Symbol

XP9926GM Distributors

📁 Related Datasheet

📌 All Tags

XP9926GM DUAL N-CHANNEL ENHANCEMENT MODE POWER MOSFET YAGEO

YAGEO XP9926GM-like datasheet