XP9960GM DUAL N-CHANNEL ENHANCEMENT MODE POWER MOSFET

YAGEO

Description

XP9960GM Halogen-Free Product DUAL N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Low On-Resistance ▼ Fast Switching Speed ▼ Surface Mount Package ▼ RoHS .
XP9960 series are innovated design and silicon process D1 D2 technology to achieve the lowest possible on-resistance and fast switching performan.

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Datasheet Specifications

Part number: XP9960GM
Manufacturer: YAGEO
File Size: 213.98 KB
Datasheet: XP9960GM-YAGEO.pdf
Description: DUAL N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Applications

* S1 S2 The SO-8 package is widely preferred for all commercialindustrial surface mount applications using infrared reflow technique and suited for voltage conversion or switch applications. Absolute Maximum Ratings@Tj=25oC(unless otherwise specified) Symbol Parameter Rating Units VDS VGS ID@

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XP9960GM DUAL N-CHANNEL ENHANCEMENT MODE POWER MOSFET YAGEO

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