Datasheet4U Logo Datasheet4U.com

VB24xxS-1W - DC/DC Converter

VB24xxS-1W Description

15:29 SHENZHEN SUNYUAN TECHNOLOGY CO., LTD.VBXXXXS/D-1W DC-DC CONVERTER www.DataSheet4U.com HIGH POWER DENSITY S:7Pin SIP PACKAGE D:14Pin DIP PACK.
SIP 1 2 4 6 3,5,7 Connection +Vin GND 0V +VO omitted +Vin GND 0V +Vo NC DIP 14 1 11 9 7 omitted 2,3,4,5,6,8,10,12,13 Note:PIN”7” can’t connect an.

VB24xxS-1W Features

* of the majority of Sunyuan components DC-DC converters is the high galvanic isolation capability. This allows several variations on circuit topography by using a single DC-DC converter. The basic input to output isolation can be used to provide either a simple isolated output power source, or to gen

📥 Download Datasheet

Preview of VB24xxS-1W PDF
datasheet Preview Page 2 datasheet Preview Page 3

Datasheet Details

Part number
VB24xxS-1W
Manufacturer
YUAN
File Size
151.60 KB
Datasheet
VB24xxS-1W_YUAN.pdf
Description
DC/DC Converter

📁 Related Datasheet

  • VB2470 - P-Channel MOSFET (VBsemi)
  • VB20100C - Dual High-Voltage Trench MOS Barrier Schottky Rectifier (Vishay)
  • VB20100C-E3 - Dual High Voltage Trench MOS Barrier Schottky Rectifier (Vishay)
  • VB20100S - High-Voltage Trench MOS Barrier Schottky Rectifier (Vishay)
  • VB20100S-E3 - High Voltage Trench MOS Barrier Schottky Rectifier (Vishay)
  • VB20100SG - High-Voltage Trench MOS Barrier Schottky Rectifier (Vishay)
  • VB20120C - Dual High-Voltage Trench MOS Barrier Schottky Rectifier (Vishay)
  • VB20120C-E3 - Dual High Voltage Trench MOS Barrier Schottky Rectifier (Vishay)

📌 All Tags

YUAN VB24xxS-1W-like datasheet