A3S56D30ETP - (A3S56D30ETP / A3S56D40ETP) 256Mb DDR SDRAM
A3S56D30ETP is a 4-bank x 8,388,608-word x 8bit, A3S56D40ETP is a 4-bank x 4,194,304-word x 16bit double data rate synchronous DRAM , with SSTL_2 interface.
All control and address signals are referenced to the rising edge of CLK.
Input data is registered on both edges of data strobe ,and output dat
A3S56D30ETP Features
* - Vdd=Vddq=2.5V+0.2V (-5E, -5, -6) - Double data rate architecture ; two data transfers per clock cycle. - Bidirectional , data strobe (DQS) is transmitted/received with data - Differential clock input (CLK and /CLK) - DLL aligns DQ and DQS transitions with CLK transitions edges of DQS - Commands en
