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A3S12D30ETP Datasheet - Powerchip

A3S12D30ETP - 512Mb DDR SDRAM

A3S12D30ETP is a 4-bank x 16,777,216-word x 8-bit, A3S12D40ETP is a 4-bank x 8,388,608-word x 16-bit, double data rate synchronous DRAM, with SSTL_2 interface.

All control and address signals are referenced to the rising edge of CLK.

Input data is registered on both edges of data strobe, and output

A3S12D30ETP Features

* - Vdd=Vddq=2.5V+0.2V (for speed grade -6, 7.5) - Vdd=Vddq=2.6V+0.1V (for speed grade -5) - Double data rate architecture; two data transfers per clock cycle - Bidirectional, data strobe (DQS) is transmitted/received with data - Differential clock inputs (CLK and /CLK) - DLL aligns DQ and DQS transit

A3S12D30ETP_Powerchip.pdf

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Datasheet Details

Part number:

A3S12D30ETP

Manufacturer:

Powerchip

File Size:

2.10 MB

Description:

512mb ddr sdram.

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