CPD76X Datasheet - centralsemi

CPD76X 1 Amp Schottky Diode

PROCESS CPD76X Schottky Diode 1 Amp Schottky Diode Chip PROCESS DETAILS Process Die Size Die Thickness Anode Bonding Pad Area Top Side Metalization Back Side Metalization EPITAXIAL PLANAR 32 x 32 MILS 5.9 MILS 27 x 27 MILS Al - 20,000Å Au - 12,000Å GEOMETRY GROSS DIE PER 5 INCH WAFER 16,276 PRINCIPAL DEVICE TYPES CMLSH1-40 CXSH-4 CTLSH1-40M832D R2 (22-March 2010) w w w. c e n t r a l s e m i . c o m http://www.Datasheet4U.com PROCESS CPD76X Typical Electrical Characteristics R2 (22-Mar.

CPD76X-centralsemi.pdf