CSD23382F4 Datasheet (Texas Instruments)

CSD23382F4, P-Channel Power MOSFET

This 66 mΩ, 12 V P-channel FemtoFET™ MOSFET is designed and optimized to minimize the footprint in many handheld and mobile applications.

This technology is capable of replacing standard small signal MOSFETs while providing at least a 60% reduction in footprint size.

Typical Part Dimensions 0.35 m

CSD23382F4 Features

* 1 Low On-Resistance

* Ultra-Low Qg and Qgd

* Ultra-Small Footprint (0402 Case Size)

* 1.0 mm × 0.6 mm

* Low Profile

* 0.35 mm Max Height

* Integrated ESD Protection Diode

* Rated >2 kV HBM

* Rated >2 kV CDM

* Pb Termina