CSD25481F4T Datasheet - Texas Instruments

CSD25481F4T P-Channel Power MOSFET

This 90 mΩ, 20 V P-Channel FemtoFET™ MOSFET is designed and optimized to minimize the footprint in many handheld and mobile applications. This technology is capable of replacing standard small signal MOSFETs while providing at least a 60% reduction in footprint size. . Typical Part Dimensions 0.35 m.

CSD25481F4T Features

* 1 Ultra-Low On Resistance

* Ultra-Low Qg and Qgd

* High Operating Drain Current

* Ultra-Small Footprint (0402 Case Size)

* 1 mm × 0.6 mm

* Ultra-Low Profile

* 0.35 mm Max Height

* Integrated ESD Protection Diode

* Rated >4 kV H

CSD25481F4T Datasheet (373.31 KB)