LM5113 - Half Bridge GaN Driver
The LM5113 device is designed to drive both the high-side and the low-side enhancement mode Gallium Nitride (GaN) FETs in a synchronous buck or a half bridge configuration.
The floating high-side driver is capable of driving a high-side enhancement mode GaN FET operating up to 100 V.
The high-side b
LM5113 Features
* 1 Independent high-side and low-side TTL logic inputs
* 1.2 A / 5 A peak source/sink current
* High-side floating bias voltage rail Operates up to 100 VDC
* Internal bootstrap supply voltage clamping
* Split outputs for adjustable turnon/turnoff strength
