LM5113 Datasheet - Texas Instruments

LM5113 Half Bridge GaN Driver

The LM5113 device is designed to drive both the high-side and the low-side enhancement mode Gallium Nitride (GaN) FETs in a synchronous buck or a half bridge configuration. The floating high-side driver is capable of driving a high-side enhancement mode GaN FET operating up to 100 V. The high-side b.

LM5113 Features

* 1 Independent high-side and low-side TTL logic inputs

* 1.2 A / 5 A peak source/sink current

* High-side floating bias voltage rail Operates up to 100 VDC

* Internal bootstrap supply voltage clamping

* Split outputs for adjustable turnon/turnoff strength

LM5113-etcTI.pdf